Datasheet BAS116,215 - NXP — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS116 Low-leakage diode

Specifications:

• Diode Type: Switching
• Forward Current If(AV): 150 mA
• Forward Surge Current Ifsm Max: 4 A
• Forward Voltage VF Max: 1.25 V
• Number of Pins: 3
• Package / Case: SOT-23
• Repetitive Reverse Voltage Vrrm Max: 85 V
• Reverse Recovery Time trr Max: 3 µs

RoHS: Yes

Andere Namen:

BAS116215, BAS116 215