Datasheet BAT18 - NXP DIODE, BAND, SWITCHING — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: DIODE, BAND, SWITCHING

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Docket:
BAT18
Silicon planar diode
Rev.

02 -- 31 August 2004 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Capacitance @ VR1: 1 pF
• Capacitance Cd @ Vr Max: 1 pF
• Capacitance Cd @ Vr Typ: 0.8 pF
• Capacitance Ct: 1 pF
• Current Ir Max: 100 nA
• Device Marking: 10*
• Diode Type: Variable Capacitance
• External Depth: 1.1 mm
• External Length / Height: 1.4 mm
• External Width: 3 mm
• Forward Current If(AV): 100 mA
• Forward Voltage VF Max: 1.2 V
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +125°C
• Package / Case: SOT-23
• Peak Forward Current: 100 mA
• Pin Configuration: 1 A, 2NC, 3K
• Repetitive Reverse Voltage Vrrm Max: 35 V
• Resistance Rd Max: 0.7 Ohm
• Reverse Voltage Vr Max: 35 V
• Reverse Voltage Vr1: 35 V
• SVHC: No SVHC (18-Jun-2010)
• Vr Cd Measurement Voltage Max: 20 V
• Vr Ir Measurement Voltage: 20 V

RoHS: Yes