Datasheet BAS29,215 - NXP DIODE, SW, 110 V, 0.25 A , SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: DIODE, SW, 110 V, 0.25 A , SOT-23

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes

Specifications:

• Current Ifsm: 10 A
• Diode Type: General Purpose
• Forward Current If(AV): 400 mA
• Forward Surge Current Ifsm Max: 10 A
• Forward Voltage VF Max: 1.25 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-23
• Repetitive Reverse Voltage Vrrm Max: 110 V
• Reverse Recovery Time trr Max: 50 ns
• Reverse Recovery Time trr Typ: 50 ns
• SVHC: No SVHC (19-Dec-2011)

RoHS: Yes

Andere Namen:

BAS29215, BAS29 215