Datasheet GS08DI25104 - IXYS RF DIODE, GAAS, SCHOTTKY, 8-SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: IXYS RF

Description: DIODE, GAAS, SCHOTTKY, 8-SOIC

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Docket:
Gallium Arsenide Schottky Rectifier
Isolated Surface Mount Package Preliminary Data
C1 A2 C2
GS8DI25104 IDC = 4 A V RRM = 250 V CJunction = 9 pF
8.

Specifications:

• Capacitance Ct: 9 pF
• Current If @ Vf: 2 A
• Diode Configuration: Dual Independent
• Diode Type: RF Schottky
• Forward Current If Max: 2 A
• Forward Voltage VF Max: 1.3 V
• Forward Voltage: 1.5 V
• Mounting Type: SMD
• Number of Pins: 8
• Package / Case: SOIC
• Peak Forward Current: 4 mA
• Pin Configuration: Dual
• Repetitive Reverse Voltage Vrrm Max: 250 V
• Reverse Voltage Vr Max: 250 V

RoHS: Yes

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