Datasheet GS150TC_25110 - IXYS RF DIODE, GAAS, SCHOTTKY, DE150 — Datenblatt

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Manufacturer: IXYS RF

Description: DIODE, GAAS, SCHOTTKY, DE150

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GaAs Schottky Diode
Extremely Fast Recovery for RF & MHz Switching Applications January 2003
Description
This new line of High Speed GaAs Schottky Diodes provide extremely fast recovery times, outperforming both Ultrafast and Silicon Carbide technologies.

The recovery times and low junction capacitances combined with their inherently low forward voltages make this new product family ideal for High Frequency Converters, Resonant Converters and Switch Mode Power Supplies operating from the KHz-MHz range. The GaAs devices are packaged in the low inductance, low profile, electrically isolated, surface mount DE-150 package. The matched thermal coefficient of expansion between the aluminum nitride substrate and the GaAs Diode result in improved reliability and power cycling performance. The GaAs Schottky products have an added advantage when used in conjunction with the DE Series Switch Mode & RF Mosfets. Both products utilize the same package profiles resulting in a convenient single plane

Specifications:

• Capacitance Ct: 18 pF
• Current If @ Vf: 2 A
• Diode Configuration: Triple Common Cathode
• Diode Type: RF Schottky
• Forward Current If Max: 2 A
• Forward Voltage VF Max: 1.5 V
• Forward Voltage: 1.5 V
• Mounting Type: SMD
• Number of Pins: 6
• Package / Case: DE150
• Peak Forward Current: 10 A
• Pin Configuration: Triple, Common Cathode
• Power Dissipation Max: 15 W
• Repetitive Reverse Voltage Vrrm Max: 250 V
• Reverse Voltage Vr Max: 250 V

RoHS: Yes