Datasheet SR303 - Taiwan Semiconductor DIODE, SCHOTTKY, 3 A, 30 V — Datenblatt

Taiwan Semiconductor SR303

Part Number: SR303

Detaillierte Beschreibung

Manufacturer: Taiwan Semiconductor

Description: DIODE, SCHOTTKY, 3 A, 30 V

Docket:
SR302 THRU SR310
3.0 AMPS.

Schottky Barrier Rectifiers
Voltage Range 20 to 100 Volts Current 3.0 Amperes
Features
Low forward voltage drop High current capability High reliability High surge current capability

Application Note

Docket:
Introduction To SCHOTTKY Rectifier and Application Guidelines
Kevin Wu, AE Manager Taiwan Semiconductor Why SCHOTTKY? For Silicon devices, the forward voltage drop of the pn-junction rectifier can not be reduced below about 0.8 volts even if the device is not required to block higher reverse voltage. In the case of the output rectifiers used in power supplies for computers and telecommunications, this voltage drop is a large fraction of the output voltage of 5V or less. This results in a loss in the power supply efficiency by 20% - 30%. For Schottky barrier rectifier they can exhibit a very low forward voltage drop leading a smaller conduction loss than that of pn-junction rectifier, and switching speeds approaching zero-time. This combination hence makes Schottky barrier rectifiers ideal for the output stages of switching power supplies. Schottky diodes Presently the breakdown voltage of the Silicon Schottky diode cannot be reliably made larger than 200V. However, the drawback
of the

Specifications:

Current Ifsm: 80 A
Diode Type: Schottky
External Diameter: 5.8 mm
External Length / Height: 9.5 mm
Forward Current If Max: 3 A
Forward Current If(AV): 3 A
Forward Surge Current Ifsm Max: 80 A
Forward Voltage VF Max: 550 mV
Forward Voltage: 550 mV
Junction Temperature Tj Max: 125°C
Mounting Type: Axial Leaded
Number of Pins: 2
Operating Temperature Range: -65°C to +125°C
Package / Case: DO-201AD
Repetitive Reverse Voltage Vrrm Max: 30 V
SVHC: No SVHC (15-Dec-2010)

RoHS: Yes