Datasheet BYW56-TAP - Vishay DIODE, AVALANCHE, 2 A, 1000 V — Datenblatt

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Manufacturer: Vishay

Description: DIODE, AVALANCHE, 2 A, 1000 V

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Docket:
BYW52 / 53 / 54 / 55 / 56
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
Features
· · · · · · · Controlled avalanche characteristics Glass passivated junction e2 Hermetically sealed package Low reverse current High surge current loading Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Specifications:

• Current Ifsm: 50 A
• Current Ir Max: 100 µA
• Diode Polarity: Cathode
• Diode Type: Standard Recovery
• Forward Current If Max: 2 A
• Forward Current If(AV): 2 A
• Forward Surge Current Ifsm Max: 50 A
• Forward Voltage VF Max: 1 V
• Forward Voltage: 1 V
• Junction Temperature Tj Max: 175°C
• Mounting Type: Axial Leaded
• Number of Pins: 2
• Operating Temperature Range: -55°C to +175°C
• Package / Case: SOD-57
• Repetitive Reverse Voltage Vrrm Max: 1 kV
• Reverse Recovery Time trr Max: 4 µs
• Reverse Recovery Time trr Typ: 4 µs
• SVHC: No SVHC (20-Jun-2011)

RoHS: Yes

Andere Namen:

BYW56TAP, BYW56 TAP