Datasheet MUR2100EG - ON Semiconductor DIODE, FAST, 2 A, 1000 V, AXIAL — Datenblatt

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Manufacturer: ON Semiconductor

Description: DIODE, FAST, 2 A, 1000 V, AXIAL

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Docket:
MUR2100E
Preferred Device
SWITCHMODEt Power Rectifier
Ultrafast "E" Series with High Reverse Energy Capability
These state-of-the-art devices are designed for use in switching power supplies, inverters and as free wheeling diodes.

Specifications:

• Breakdown Voltage Max: 1 kV
• Current Ifsm: 35 A
• Diode Type: Fast Recovery
• Forward Current If(AV): 2 A
• Forward Surge Current Ifsm Max: 35 A
• Forward Voltage VF Max: 2.2 V
• Forward Voltage: 2.2 V
• Junction Temperature Tj Max: 175°C
• Mounting Type: Axial Leaded
• Number of Pins: 2
• Package / Case: Axial Leaded
• Repetitive Reverse Voltage Vrrm Max: 1 kV
• Reverse Recovery Time trr Max: 75 ns
• Reverse Recovery Time trr Typ: 75 ns
• SVHC: No SVHC (15-Dec-2010)

RoHS: Yes