Datasheet ON Semiconductor MBR340G — Datenblatt

MBR340
Preferred Device Axial Lead Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes. SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES, 40 VOLTS Features •
•
•
•
• http://onsemi.com Extremely Low VF
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
Pb−Free Packages are Available* Mechanical Characteristics: • Case: Epoxy, Molded
• Weight: 1.1 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
• AXIAL LEAD
CASE 267−05 …