Datasheet MBD54DWT1G - ON Semiconductor SCHOTTKY DIODE, 200 mA FORWARD — Datenblatt

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Manufacturer: ON Semiconductor

Description: SCHOTTKY DIODE, 200 mA FORWARD

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Docket:
MBD54DWT1
Preferred Device
Dual Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping.

Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Features http://onsemi.com

Specifications:

• Current Ifsm: 600 mA
• Diode Type: Schottky
• Forward Current If(AV): 200 mA
• Forward Surge Current Ifsm Max: 600 mA
• Forward Voltage VF Max: 320 mV
• Junction Temperature Tj Max: 125°C
• Mounting Type: SMD
• Number of Pins: 6
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-363
• Repetitive Reverse Voltage Vrrm Max: 30 V
• Reverse Recovery Time trr Max: 5 ns
• Reverse Recovery Time trr Typ: 5 ns
• SVHC: No SVHC (19-Dec-2011)

RoHS: Yes